parameter max. units v ds drain- source voltage 30 v i d @ t a = 25c continuous drain current, v gs @ 10v 12.5 i d @ t a = 70c continuous drain current, v gs @ 10v 10 a i dm pulsed drain current 50 p d @t a = 25c power dissipation 2.5 p d @t a = 70c power dissipation 1.6 linear derating factor 0.02 w/c e as single pulse avalanche energy 400 mj v gs gate-to-source voltage 20 v t j, t stg junction and storage temperature range -55 to + 150 c n-channel mosfet low on-resistance low gate charge surface mount logic level drive lead-free 8/11/04 SI4420DYPBF hexfet power mosfet parameter max. units r ja maximum junction-to-ambient 50 c/w thermal resistance this n-channel hexfet power mosfet is produced using international rectifier's advanced hexfet power mosfet technology. the low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications the so-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mw in typical board mount applications. v dss = 30v r ds(on) = 0.009 ? description top view 8 1 2 3 4 5 6 7 d d d d g s a s s a
www.irf.com 1 pd - 95729 so-8
2 www.irf.com parameter min. typ. max. units conditions i s continuous source current mosfet symbol (diode conduction) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? 1.1 v t j = 25c, i s = 2.3a, v gs = 0v t rr reverse recovery time ??? 52 78 ns t j = 25c, i f = 2.3a repetitive rating; pulse width limited by max. junction temperature. pulse width 300s; duty cycle source-drain ratings and characteristics 50 2.3 s d g when mounted on fr4 board, t 10 sec parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 30 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.028 ??? v/c reference to 25c, i d = 1ma ??? ??? 0.009 v gs = 10v, i d = 12.5a ??? ??? 0.013 v gs = 4.5v, i d = 10.5a v gs(th) gate threshold voltage 1.0 ??? ??? v v ds = v gs , i d = 250a g fs forward transconductance ??? 29 ??? s v ds = 15v, i d = 12.5a ??? ??? 1.0 v ds = 30v, v gs = 0v ??? ??? 5.0 v ds = 30v, v gs = 0v, t j = 55c gate-to-source forward leakage ??? ??? -100 v gs = -20v gate-to-source reverse leakage ??? ??? 100 v gs = 20v q g total gate charge ??? 52 78 i d = 12.5a q gs gate-to-source charge ??? 8.7 ??? nc v ds = 15v q gd gate-to-drain ("miller") charge ??? 12 ??? v gs = 10v, see fig. 6 t d(on) turn-on delay time ??? 15 ??? v dd = 15v t r rise time ??? 10 ??? i d = 1.0a t d(off) turn-off delay time ??? 55 ??? r g = 6.0 ? t f fall time ??? 47 ??? r d = 15 ? , c iss input capacitance ??? 2240 ??? v gs = 0v c oss output capacitance ??? 1100 ??? pf v ds = 15v c rss reverse transfer capacitance ??? 150 ??? ? = 1.0mhz, see fig. 5 electrical characteristics @ t j = 25c (unless otherwise specified) i gss ? r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current
starting t j = 25c, l = 13mh r g = 25 ? , i as = 8.9a. (see figure 15)
www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 4.0 5.0 6.0 7.0 8.0 9.0 v gs , gate-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 25v 20s pulse width t j = -55c -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 12.5a 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v
4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 20 40 60 80 100 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 12.5a v = 15v ds v = 24v ds 1 10 100 0 1000 2000 3000 4000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 1 10 100 1000 0.0 1.0 2.0 3.0 4.0 5.0 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms
www.irf.com 5 fig 11. typical effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0 2 4 6 8 10 12 14 t , case temperature ( c) i , drain current (a) c d typical power vs. time 0 20 40 60 80 100 0.01 0.1 1 10 100 a power ( w) time (sec) 0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 10 0 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
6 www.irf.com fig 12. typical on-resistance vs. drain current fig 13. typical on-resistance vs. gate voltage 0.00 0.04 0.08 0.12 0.16 0.20 01020304050 a i , drain current (a) d r , drain-to-source on resistance ds(on) (?) v = 10v gs v = 4.5v gs typical threshold voltage vs.temperature fig 15. maximum avalanche energy vs. drain current 25 50 75 100 125 150 0 200 400 600 800 1000 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 4.0a 7.1a 8.9a -60 -20 20 60 100 140 180 t j , temperature (c) 1.0 1.5 2.0 2.5 3.0 v g s ( t h ) , v a r i a c e ( v ) i d = 250a 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v gs, gate -to -source voltage (v) 0.006 0.008 0.010 0.012 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 12.5a
www.irf.com 7 so-8 package outline dimensions are shown in millimeters (inches) so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012 aa. not e s : 1. dimens ioning & tolerancing per asme y14.5m-1994. 2. cont rol l ing dime ns ion: mil l ime t e r 3. dime ns ions are s hown in mil l ime t e rs [inche s ]. 5 dime ns ion doe s not incl u de mol d pr ot ru s ions . 6 dime ns ion doe s not incl u de mol d pr ot ru s ions . mold protrus ions not to exceed 0.25 [.010]. 7 dimens ion is t he lengt h of lead for soldering to a s ubst rat e. mold protrus ions not to exceed 0.15 [.006]. 8x 1.78 [.070 ] dat e code (yww) xxxx international rectifier logo f 7101 y = last digit of the year part number lot code ww = week e xample: t his is an irf7101 (mos f et ) p = de s i gnat e s l e ad- f r e e product (optional) a = assembly site code
8 www.irf.com 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) n otes: 1 . controlling dimension : millimeter. 2 . all dimensions are shown in millimeters(inches). 3 . outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in millimeters (inches) data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualifications standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/04
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